ELL316 Introduction to VLSI Design

Credits: 3 (3-0-0)

Prerequisites: ELL211

Description

Basic MOS characteristics; Deep sub-micron; velocity saturation; Dynamic MOS characteristics; parasitics; leakage; sizing; propagation delay; Logical effort, path delay, optimization; Ratio-ed logic, Pass transistor logic and parasitics; Dynamic logic, pulsed sequential logic; Logical synthesis, physical design, layout; Introduction to design of VLSI memories.

Prerequisite Tree

flowchart TD
ELL316-318[ELL316]
ELL211-318 --> ELL101-318[ELL101]
ELL211-318 --> PYL101-318[PYL101]
ELL316-318 --> ELL211-318[ELL211]

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