Credits: 3 (3-0-0)
Description
Review of basics of semiconductor devices. Schottky diode, qualitative description, junction properties, I-V characteristics in forward and reverse biased diodes, high frequency application of Schottky diode, Schotty barrier gate FET. GaAs MESFET I-V characteristics, High Electron Mobility Transistor (HEMT), Hetro-structures, SOI technologies and MOSFETs, Fabrication technologies for GaAs MESFET, MBE, Ion Implantation. Pattern transfer at sub-micron level.